Semiconductor device fabrication
MOSFET scaling ( process nodes)
0 20 µm – 1968 0 10 µm – 1971 00 6 µm – 1974 00 3 µm – 1977   1.5 µm – 1981 00 1 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 0 90 nm – 2003 0 65 nm – 2005 0 45 nm – 2007 0 32 nm – 2009 0 28 nm – 2010 0 22 nm – 2012 0 14 nm – 2014 0 10 nm – 2016 00 7 nm – 2018 00 5 nm – 2020 00 3 nm – 2022
Future 00 2 nm ~ 2024
Half-nodes Density CMOS Device ( multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The "28 nm" lithography process is a half-node semiconductor manufacturing process based on a die shrink of the "32 nm" lithography process. ^[1] It appeared in production in 2010. ^[2]

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no direct relation to the dimensions on the integrated circuit; ^[3] neither gate length, metal pitch or gate pitch on a "28nm" device is twenty-eight nanometers. ^{[4] [5] [6] [7]}

Taiwan Semiconductor Manufacturing Company has offered "28 nm" production using high-K metal gate process technology. ^[8]

GlobalFoundries offers a "28nm" foundry process called the "28SLPe" ("28nm Super Low Power") foundry process, which uses high-K metal gate technology. ^[9]

Design

"28nm" requires twice the number of design rules for ensuring reliability in manufacturing as "80nm". ^[10]

Shipped devices

This section needs to be updated. Please help update this article to reflect recent events or newly available information. (April 2024)

AMD's Radeon HD 7970 uses a graphics processing unit manufactured using a "28nm" process. ^[11]

Some models of the PS3 use a RSX 'Reality Synthesizer' chip manufactured using a "28nm" process. ^[12]

FPGAs produced with "28 nm" process technology include models of the Xilinx Artix 7 FPGAs and Altera Cyclone V FPGAs. ^[13]

References

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