Aluminium gallium antimonide, also known as gallium aluminium antimonide or AlGaSb (
AlxGa1-xSb), is a ternary
III-V semiconductor compound. It can be considered as an alloy between
aluminium antimonide and
gallium antimonide. The alloy can contain any ratio between aluminium and gallium. AlGaSb refers generally to any composition of the alloy.
Dependence of the
direct and indirect band gaps of AlGaSb on composition at room temperature (T = 300 K).[3] Based on these recommended empirical relationships, the transition from a direct (Γ–Γ) to indirect (Γ–X) gap occurs at x = 0.43.
The
bandgap and lattice constant of AlGaSb alloys are between those of pure
AlSb (a = 0.614 nm, Eg = 1.62 eV) and
GaSb (a = 0.610 nm, Eg = 0.73 eV).[3] At an intermediate composition, the bandgap transitions from an
indirect gap, like that of pure AlSb, to a
direct gap, like that of pure GaSb. Different values of the composition at which this transition occurs have been reported over time, both from computational and experimental studies, with reported values ranging from x = 0.23 to x = 0.43.[3][4][5] The spread in the reported values of the transition is mainly due to the closeness of the gap sizes at the
Γ and L points in the Brillouin zone and variations in the experimentally-determined gap sizes.[3]
^
abcdVurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875.
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^Wang, F., Jia, Y., Li, S.-F., Sun, Q. (2009). "First-principles calculation of the 6.1 Å family bowing parameters and band offsets". Journal of Applied Physics. 105 (4): 043101–043101–4.
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2009JAP...105d3101W.
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^Mathieu, H., Auvergne, D., Merle, P., Rustagi, K. C. (1975). "Electronic energy levels in Ga1−xAlxSb alloys". Physical Review B. 12 (12): 5846–5852.
doi:
10.1103/PhysRevB.12.5846.
^
abBennett, B. R., Boos, J. B., Ancona, M. G., Papanicolaou, N. A., Cooke, G. A., Kheyrandish, H. (2007). "InAlSb/InAs/AlGaSb Quantum Well Heterostructures for High-Electron-Mobility Transistors". Journal of Electronic Materials. 36 (2): 99–104.
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^Magno, R., Bracker, A. S., Bennett, B. R. (2001). "Resonant interband tunnel diodes with AlGaSb barriers". Journal of Applied Physics. 89 (10): 5791–5793.
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^Wang, C. A., Jensen, K. F., Jones, A. C., Choi, H. K. (1996). "n -AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy". Applied Physics Letters. 68 (3): 400–402.
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1996ApPhL..68..400W.
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^Xie, H., Wang, W. I. (1993). "Normal incidence infrared modulator using direct–indirect transitions in GaSb quantum wells". Applied Physics Letters. 63 (6): 776–778.
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1993ApPhL..63..776X.
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